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2N5671 - NPN High Power Silicon Transistor

2N5671 Description

2N5671 & 2N5672 NPN High Power Silicon Transistor .
at any time, without notice.

2N5671 Features

* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/488
* TO-3 (TO-204AA) Package

2N5671 Applications

* Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 200 mA dc, 2N5671 IC = 200 mA dc, 2N5672 V(BR)CEO V dc 90 120
* Collector - Base Cutoff Current VCE = 120 V dc, 2N56

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Datasheet Details

Part number
2N5671
Manufacturer
VPT
File Size
379.26 KB
Datasheet
2N5671-VPT.pdf
Description
NPN High Power Silicon Transistor

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NPN High Power Silicon Transistor VPT
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