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2N6301, 2N6300 Datasheet - Microsemi

2N6301 PNP DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C (1) @ TC = 1000C VCEO VCBO VEBO IB IC PT Operating & Storage Junction Temperature Range TJ, Tstg 1) Derate linearly 0.428 W/0C above TC > 00C 2N6300 2N6301 60 80 60 80 5.0 120 8.0 75 .

2N6300-Microsemi.pdf

This datasheet PDF includes multiple part numbers: 2N6301, 2N6300. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N6301, 2N6300

Manufacturer:

Microsemi ↗

File Size:

52.19 KB

Description:

Pnp darlington power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N6301, 2N6300.
Please refer to the document for exact specifications by model.

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2N6301 2N6300 PNP DARLINGTON POWER SILICON TRANSISTOR Microsemi

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