APTGT150H120G Datasheet - Microsemi

APTGT150H120G, IGBT

APTGT150H120G Full - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 Q3 G3 VCES = 1200V IC = 150A @ Tc = 80°C Application * Wel.

Features

* Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
* Kelvin emitter for easy drive
* Very lo

APTGT150H120G-Microsemi.pdf