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MSC2X101SDA120J - Dual Silicon Carbide Schottky Barrier Diode

Datasheet Summary

Features

  • The following are key features of the MSC2X101SDA120J and MSC2X100SDA120J devices:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant.
  • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X101SDA120J and MSC2X100SDA120J devices:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.

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Datasheet Details

Part number MSC2X101SDA120J
Manufacturer Microsemi
File Size 1.06 MB
Description Dual Silicon Carbide Schottky Barrier Diode
Datasheet download datasheet MSC2X101SDA120J Datasheet
Additional preview pages of the MSC2X101SDA120J datasheet.

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Full PDF Text Transcription

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MSC2X101/100SDA120J Dual Silicon Carbide Schottky Barrier Diode Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X101/100SDA120J are dual 1200 V, 100 A SiC SBD devices in a SOT-227 package.
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