VRF148A
FEATURES
- Improved Ruggedness V(BR)DSS = 170 V
- 30W with 20d B Typical Gain @ 30MHz, 50V
- 30W with 16d B Typical Gain @ 175MHz, 50V
- Excellent Stability & Low IMD
- mon Source Configuration
- Available in Matched Pairs
- 30:1 Load VSWR Capability at Specified Operating Conditions
- Nitride Passivated
- Refractory Gold Metallization
- High Voltage Replacement for MRF148A
- Ro HS pliant
Maximum Ratings
Symbol VDSS ID VGS PD TSTG TJ
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature
All Ratings: TC =25°C unless otherwise specified
VRF148A(MP)
Unit
±40
-65 to 150 °C
Static Electrical Characteristics
Symbol V(BR)DSS VDS(ON)
IDSS IGSS gfs VGS(TH)
Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 1m A) On State Drain Voltage (ID(ON) = 2.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source...
