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APTGF50DH60TG Asymmetrical - Bridge NPT IGBT Power Module

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Description

APTGF50DH60TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 600V IC = 50A @ Tc = 80°C Application.

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Features

* Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
* Kelvin emitter for easy drive
* Very low stra

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Asymmetrical Bridge NPT IGBT Power Module Microsemi Corporation
Microsemi Corporation APTGF50DH60TG-like datasheet