Datasheet4U.com

JANKCE1N5809 - 6 AMPS FAST RECOVERY RECTIFIER

Microsemi Corporation

📥 Download Datasheet

JANKCE1N5809 Datasheet Preview — Preview of JANKCE1N5809 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: JANKCE1N5809
Manufacturer: Microsemi ↗ Corporation
File Size: 46.42 KB
Datasheet: JANKCE1N5809_MicrosemiCorporation.pdf
Description: 6 AMPS FAST RECOVERY RECTIFIER

JANKCE1N5809 Product details

Features

Chip Outline Dimensions: 68 x 68 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 70,000Ã Nominal Bonding Area: 42 x 42 mils Min. Back Metallization: Gold-3000Ã Nominal Junction Passivated with Thermal Silicon Dioxide - Planar Design Backside Available with Solderable Ag Backside as JANHCF or JANKCF 6 AMPS FAST.

📁 Related Datasheet

JANKCE2N5152 - NPN Power Silicon Transistor (VPT)
JANKCA1N6638 - Silicon Switching Diode (VPT)
JANKCA1N6642 - Silicon Switching Diode (VPT)
JANKCA1N6643 - Silicon Switching Diode (VPT)
JANKCB1N5711 - Schottky Barrier Diode (VPT)
JANKCC1N4099 - Zener Diode (VPT)
JANKCC1N4100 - Zener Diode (VPT)
JANKCC1N4101 - Zener Diode (VPT)

📌 All Tags

AMPS FAST RECOVERY RECTIFIER Microsemi Corporation

Microsemi Corporation JANKCE1N5809-like datasheet

JANKCE1N58011 - 6 AMPS FAST RECOVERY RECTIFIER
JANKCE1N5802 - 6 AMPS FAST RECOVERY RECTIFIER
JANKCE1N5804 - 6 AMPS FAST RECOVERY RECTIFIER
JANKCE1N5806 - 6 AMPS FAST RECOVERY RECTIFIER
JANKCE1N5807 - 6 AMPS FAST RECOVERY RECTIFIER
JAN2N1711 - NPN LOW POWER SILICON TRANSISTOR

JANKCE1N5809 Stock/Price