ICE7N60 Datasheet - Micross Components

N-Channel MOSFET

ICE7N60 General Description

TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Sourc.

ICE7N60 Datasheet (710.79 KB)

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ICE7N60

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Micross Components

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710.79 KB

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N-channel mosfet.
ICE7N60 N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 7A 600V 0.52Ω 21nC Fea.

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ICE7N60 N-Channel MOSFET Micross Components

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ICE7N60 General Description

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