XP1009 - GaAs MMIC Power Amplifier

Product Overview

Mimix Broadband

Datasheet Details

Part number	XP1009
Manufacturer	Mimix Broadband
File Size	171.39 KB
Description	GaAs MMIC Power Amplifier
Datasheet	XP1009_MimixBroadband.pdf
Additional preview pages of the XP1009 datasheet.

Product details

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.5 VDC 330,660 mA +0.3 VDC +12 dBm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3 (3) Channel temperature affects a device's MTTF.It is recommended to keep channel temperature as low as possible for maximum life.Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input R

Features

Excellent Linear Output Amplifier Stage 20.0 dB Small Signal Gain +29.5 dBm P1dB Compression Point +38.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam litho.

📁 Similar Datasheet

XP1005-BD - Power Amplifier (MA-COM)
XP1011ALMT - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
XP1031-QK - Power Amplifier (MA-COM)
XP1035-QH - Power Amplifier (MA-COM)
XP1039-QJ - Power Amplifier (MA-COM)
XP1042-QT - Power Amplifier (MA-COM)
XP1043-QH - Power Amplifier (MA-COM)
XP1044-QL - Power Amplifier (MA-COM)

Other Datasheets by Mimix Broadband

XP1000 - GaAs MMIC Power Amplifier
XP1000-BD - GaAs MMIC Power Amplifier
XP1001 - GaAs MMIC Power Amplifier
XP1003 - GaAs MMIC Power Amplifier
XP1003-BD - Power Amplifier
XP1005 - GaAs MMIC Power Amplifier

Published: May 25, 2007 |