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XP1013-BD - Power Amplifier

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Datasheet Details

Part number XP1013-BD
Manufacturer Mimix Broadband
File Size 462.08 KB
Description Power Amplifier
Datasheet download datasheet XP1013-BD Datasheet

General Description

Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power.This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 650 mA +0.3 VDC +5.0 dBm -65 to +165 OC -55 to MTTF Table1 MTTF Table1 (1) Channel temperature affects a device's MTTF.

It is recommended to keep channel temperature as low as possible for maximum life.

Overview

17.0-26.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 08-Aug-07.

Key Features

  • Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 P1013-BD Chip Device Layout XP1013-BD General.

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