FX3ASJ-3
Mitsubishi Electric Semiconductor
44.89 KB
High-speed switching use.
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MITSUBISHI Pch POWER M.
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FX30ASJ-03 - Pch Power MOS FET
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FX30ASJ-03
High-Speed Switching Use Pch Power MOS FET
Features
• Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated.
FX30ASJ-03 - Pch POWER MOSFET
(Mitsubishi Electric Semiconductor)
PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
FX30ASJ-03
MITSUBISHI Pch POWER MOSFET
FX30ASJ-03
HIGH-SPEE.
FX30KMJ-03 - HIGH-SPEED SWITCHING USE
(Mitsubishi Electric Semiconductor)
P
. . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som
IM REL
RY A N I
MITSUBISHI Pch POWER M.
FX30KMJ-06 - HIGH-SPEED SWITCHING USE
(Mitsubishi Electric Semiconductor)
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. . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som
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FX30KMJ-2 - HIGH-SPEED SWITCHING USE
(Mitsubishi Electric Semiconductor)
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. . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som
IM REL
RY A N I
MITSUBISHI Pch POWER M.
FX30KMJ-3 - HIGH-SPEED SWITCHING USE
(Mitsubishi Electric Semiconductor)
P
. . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som
IM REL
RY A N I
MITSUBISHI Pch POWER M.
