Part number:
FX30ASJ-03
Manufacturer:
File Size:
165.92 KB
Description:
Pch power mos fet.
FX30ASJ-03 Datasheet (165.92 KB)
* Drive voltage : 4 V
* VDSS :
* 30 V
* rDS(ON) (max) : 61 mΩ
* ID :
* 30 A
* Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 4 12 3 1 3 2, 4 REJ03G1445-0200 (Previous: MEJ02G0266
FX30ASJ-03 Datasheet (165.92 KB)
FX30ASJ-03
165.92 KB
Pch power mos fet.
📁 Related Datasheet
FX30ASJ-03 - Pch POWER MOSFET
(Mitsubishi Electric Semiconductor)
PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
FX30ASJ-03
MITSUBISHI Pch POWER MOSFET
FX30ASJ-03
HIGH-SPEE.
FX300 - Selective Call Tone Decoders
(CML)
.
FX304 - C-NET AUDIO PROCESSOR
(ETC)
.
FX30KMJ-03 - HIGH-SPEED SWITCHING USE
(Mitsubishi Electric Semiconductor)
P
. . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som
IM REL
RY A N I
MITSUBISHI Pch POWER M.
FX30KMJ-06 - HIGH-SPEED SWITCHING USE
(Mitsubishi Electric Semiconductor)
P
. . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som
IM REL
RY A N I
MITSUBISHI Pch POWER M.
FX30KMJ-2 - HIGH-SPEED SWITCHING USE
(Mitsubishi Electric Semiconductor)
P
. . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som
IM REL
RY A N I
MITSUBISHI Pch POWER M.
FX30KMJ-3 - HIGH-SPEED SWITCHING USE
(Mitsubishi Electric Semiconductor)
P
. . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som
IM REL
RY A N I
MITSUBISHI Pch POWER M.
FX30SMJ-3 - Pch Power MOS FET
(Renesas)
FX30SMJ-3
High-Speed Switching Use Pch Power MOS FET
Features
• Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated.
