QM300DY-24B
Mitsubishi Electric Semiconductor
85.06 KB
High power switching use insulated type.
MITSUBISHI TRANSISTOR MODULES
QM300DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
QM300DY-24B
* *.
* * *
IC Collector current 300A VCEX Collector-emitter voltage 1200V hFE DC current gain 750 Ins.
📁 Related Datasheet
QM300DY-24 - HIGH POWER SWITCHING USE INSULATED TYPE
(Mitsubishi Electric Semiconductor)
MITSUBISHI TRANSISTOR MODULES
QM300DY-24
HIGH POWER SWITCHING USE
INSULATED TYPE
QM300DY-24
• • • • •
IC Collector current .
QM300DY-2H - HIGH POWER SWITCHING USE INSULATED TYPE
(Mitsubishi Electric Semiconductor)
MITSUBISHI TRANSISTOR MODULES
QM300DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM300DY-2H
• • • • •
IC Collector current .
QM300DY-2HB - HIGH POWER SWITCHING USE INSULATED TYPE
(Mitsubishi Electric Semiconductor)
MITSUBISHI TRANSISTOR MODULES
QM300DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM300DY-2HB
• • • • •
IC Collector current .
QM3001D - P-Ch 30V Fast Switching MOSFETs
(UBIQ)
QM3001D
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3001D is the highest performance trench P-ch MOSFETs with extreme high cell density.
QM3001G - P-Ch 30V Fast Switching MOSFETs
(UBIQ)
QM3001G
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3001G is the highest performance trench P-ch MOSFETs with extreme high cell density.
QM3001J - P-Ch 30V Fast Switching MOSFETs
(UBIQ)
QM3001J
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3001J is the highest performance trench P-ch MOSFETs with extreme high cell density.
TAGS
Image Gallery
