* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 400-470MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
* Module Size: 66 x 21 x 9.88 mm
* Linear ope
RA13H4047M Datasheet (85.84 KB)
RA13H4047M
Mitsubishi Electric Semiconductor
85.84 KB
Mitsubishi rf mosfet module 400-470mhz 13w 12.5v/ 2 stage amp. for mobile radio.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M BLOCK DIAGRAM 2 3 400-470MHz 13W 12.5V, 2 Stage A.
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