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RA13H1317M

MOBILE RADIO

RA13H1317M Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)

* Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 135-175 MHz www.DataSheet4U.com 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery R

RA13H1317M General Description

The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the.

RA13H1317M Datasheet (96.43 KB)

Preview of RA13H1317M PDF

Datasheet Details

Part number:

RA13H1317M

Manufacturer:

Mitsubishi Electric

File Size:

96.43 KB

Description:

Mobile radio.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M 135-175MHz 13W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 .

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RA13H1317M MOBILE RADIO Mitsubishi Electric

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