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RA13H8891MB

3 Stage Amp

RA13H8891MB Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>13W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=1mW

* Broadband Frequency Range: 880-915MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V

* Module Size: 60.5 x 14 x 6.4 mm

* Linear ope

RA13H8891MB General Description

The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the.

RA13H8891MB Datasheet (161.12 KB)

Preview of RA13H8891MB PDF

Datasheet Details

Part number:

RA13H8891MB

Manufacturer:

Mitsubishi Electric

File Size:

161.12 KB

Description:

3 stage amp.
www.DataSheet4U.com MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB BLOCK DIAGRAM RoHS Complian.

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RA13H8891MB Stage Amp Mitsubishi Electric

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