Datasheet4U Logo Datasheet4U.com

RA13H3340M

MOBILE RADIO

RA13H3340M Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)

* Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 330-400MHz www.DataSheet4U.com 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF

RA13H3340M General Description

The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the.

RA13H3340M Datasheet (94.46 KB)

Preview of RA13H3340M PDF

Datasheet Details

Part number:

RA13H3340M

Manufacturer:

Mitsubishi Electric

File Size:

94.46 KB

Description:

Mobile radio.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 .

📁 Related Datasheet

RA13H1317M MOBILE RADIO (Mitsubishi Electric)

RA13H4047M MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO (Mitsubishi Electric Semiconductor)

RA13H4047M-01 MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO (Mitsubishi Electric Semiconductor)

RA13H4047M-E01 MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO (Mitsubishi Electric Semiconductor)

RA13H4452M MOBILE RADIO (Mitsubishi Electric)

RA13H8891MA 2 Stage Amp (Mitsubishi Electric)

RA13H8891MB 3 Stage Amp (Mitsubishi Electric)

RA13 Schottky Barrier Diodes 30V (Sanken electric)

RA1133J RA1133J FULL FRAME CCD IMAGE SENSOR (PerkinElmer Optoelectronics)

RA1133J FULL FRAME CCD IMAGE SENSOR (PerkinElmer Optoelectronics)

TAGS

RA13H3340M MOBILE RADIO Mitsubishi Electric

Image Gallery

RA13H3340M Datasheet Preview Page 2 RA13H3340M Datasheet Preview Page 3

RA13H3340M Distributor