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RA18H1213G

3 Stage Amp

RA18H1213G Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>18W, ηT>20% @ VDD=12.5V, VGG=5V, Pin=200mW

* Broadband Frequency Range: 1.24-1.30GHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V www.DataSheet4U.com

* Module Size: 66 x 21 x 9.88

RA18H1213G General Description

The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into th.

RA18H1213G Datasheet (122.91 KB)

Preview of RA18H1213G PDF

Datasheet Details

Part number:

RA18H1213G

Manufacturer:

Mitsubishi Electric

File Size:

122.91 KB

Description:

3 stage amp.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G BLOCK DIAGRAM 1.24-1.30GHz 18W 12.5V, 3 Stage Amp.

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RA18H1213G Stage Amp Mitsubishi Electric

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