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BA01207 Datasheet - Mitsubishi Electric

BA01207, GaAs HBT HYBRID IC

MITSUBISHI SEMICONDUCTOR BA01207 Specifications are subject to change without notice.GaAs HBT HYBRID IC .
The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone.
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BA01207_MitsubishiElectric.pdf

Preview of BA01207 PDF

Datasheet Details

Part number:

BA01207

Manufacturer:

Mitsubishi Electric

File Size:

56.09 KB

Description:

GaAs HBT HYBRID IC

Features

* Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input
* and output matching

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