BA01207 GaAs HBT HYBRID IC

Mitsubishi Electric

Description

MITSUBISHI SEMICONDUCTOR BA01207 Specifications are subject to change without notice.GaAs HBT HYBRID IC .
The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone.

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Datasheet Specifications

Part number: BA01207
Manufacturer: Mitsubishi Electric
File Size: 56.09 KB
Datasheet: BA01207_MitsubishiElectric.pdf
Description: GaAs HBT HYBRID IC

Features

* Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input
* and output matching

BA01207 Distributors

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BA01207 GaAs HBT HYBRID Mitsubishi Electric

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