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BA01207 - GaAs HBT HYBRID IC

BA01207 Description

MITSUBISHI SEMICONDUCTOR BA01207 Specifications are subject to change without notice.GaAs HBT HYBRID IC .
The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone.

BA01207 Features

* Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input
* and output matching

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Preview of BA01207 PDF

Datasheet Details

Part number
BA01207
Manufacturer
Mitsubishi Electric
File Size
56.09 KB
Datasheet
BA01207_MitsubishiElectric.pdf
Description
GaAs HBT HYBRID IC

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GaAs HBT HYBRID Mitsubishi Electric
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