BA01232 Datasheet, Designed, Mitsubishi Electric Semiconductor

BA01232 Features

• Designed Low voltage Vcc=3.5V High power Po=26.5dBm @1920∼1980MHz High gain Gp=27.5dB @Po=26.5dBm 2stage amplifier Internal input and output matching Small size package 4x4x1.2mm ‡E ‡D ‡C 4.00

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Part number:

BA01232

Manufacturer:

Mitsubishi Electric Semiconductor

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45.92kb

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📄 Datasheet

Description:

Gaas rf amplifier designed. The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone. ‡@ FEATURES Low voltage Vcc=3.5V High power Po=26.5dBm @1920∼1

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BA01232

Mitsubishi Electric Semiconductor

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