* Low voltage Vcc=3.5V High power Po=26.5dBm @1920∼1980MHz High gain Gp=27.5dB @Po=26.5dBm 2stage amplifier Internal input and output matching Small size package 4x4x1.2mm ‡E ‡D ‡C 4.00 1.40 1.2 ‡@ Pin ‡C Pout ‡A Vc1 ‡D Vcb ‡B Vc2 ‡E Vref 4.00 ‡A ‡B APPLICATION W-CDMA(UTRA/FDD) mobile transmitter (
BA01232
Mitsubishi Electric Semiconductor
45.92 KB
Gaas rf amplifier designed.
www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. BA01232 HBT HYBRID IC OUTLINE DRAWING.
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