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BA01232

GaAs RF amplifier designed

BA01232 Features

* Low voltage Vcc=3.5V High power Po=26.5dBm @1920∼1980MHz High gain Gp=27.5dB @Po=26.5dBm 2stage amplifier Internal input and output matching Small size package 4x4x1.2mm ‡E ‡D ‡C 4.00 1.40 1.2 ‡@ Pin ‡C Pout ‡A Vc1 ‡D Vcb ‡B Vc2 ‡E Vref 4.00 ‡A ‡B APPLICATION W-CDMA(UTRA/FDD) mobile transmitter (

BA01232 Datasheet (45.92 KB)

Preview of BA01232 PDF

Datasheet Details

Part number:

BA01232

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

45.92 KB

Description:

Gaas rf amplifier designed.
www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. BA01232 HBT HYBRID IC OUTLINE DRAWING.

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BA01232 GaAs amplifier designed Mitsubishi Electric Semiconductor

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