* G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (IC(max) = 500mA) G 3V micro computer compatible input G “L” active level input G With input diode G With clamping diodes G Wide operating temperature range (Ta =
* 40 to +85° C) IN3 IN4 INPUT IN5 IN6 IN7 IN8 GND 20P2N-A(FP) Pac
M63836KP
Mitsubishi Electric
97.88 KB
(m63836xp) 8-unit 500ma darlington transistor-array.
www.DataSheet4U.com
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MITSUBISHI SEMICONDUCTOR
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