ML792E32 Datasheet, Diode, Mitsubishi Electric

ML792E32 Features

• Diode λ /4 phase shifted grating structure Wide temperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 15GHz) Chip-on-

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ML792E32

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Mitsubishi Electric

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📄 Datasheet

Description:

(ml7xx32) 10gbps ingaasp dfb laser diode. ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm. λ /4 phase

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ML792E32

Mitsubishi Electric

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