ML792E32 Datasheet (Mitsubishi Electric) - (ML7xx32) 10Gbps InGaAsP DFB LASER DIODE

ML792E32, (ML7xx32) 10Gbps InGaAsP DFB LASER DIODE

ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm.

λ /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation.

Furthermore, ML7xx32 is able to operate in the wide temperature ra

ML792E32 Features

* λ /4 phase shifted grating structure Wide temperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 15GHz) Chip-on-carrier www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol If VRL Tc Tstg P arameter Laser forward current Laser