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ML792H32, ML792E32 Datasheet - Mitsubishi Electric

ML792E32_MitsubishiElectric.pdf

This datasheet PDF includes multiple part numbers: ML792H32, ML792E32. Please refer to the document for exact specifications by model.
ML792H32 Datasheet Preview Page 2

Datasheet Details

Part number:

ML792H32, ML792E32

Manufacturer:

Mitsubishi Electric

File Size:

97.58 KB

Description:

(ml7xx32) 10gbps ingaasp dfb laser diode.

Note:

This datasheet PDF includes multiple part numbers: ML792H32, ML792E32.
Please refer to the document for exact specifications by model.

ML792H32, ML792E32, (ML7xx32) 10Gbps InGaAsP DFB LASER DIODE

ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm.

λ /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation.

Furthermore, ML7xx32 is able to operate in the wide temperature ra

ML792H32 Features

* λ /4 phase shifted grating structure Wide temperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 15GHz) Chip-on-carrier www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol If VRL Tc Tstg P arameter Laser forward current Laser

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