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M2S56D20TP-10

256M Double Data Rate Synchronous DRAM

M2S56D20TP-10 Features

* - Vdd=Vddq=2.5v±0.2V - Double data rate architecture; two data transfers per clock cycle - Bidirectional, data strobe (DQS) is transmitted/received with data - Differential clock inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transitions edges of DQS - Commands entered on each po

M2S56D20TP-10 General Description

M2S56D20TP is a 4-bank x 16777216-word x 4-bit, M2S56D30TP is a 4-bank x 8388608-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data an.

M2S56D20TP-10 Datasheet (259.90 KB)

Preview of M2S56D20TP-10 PDF

Datasheet Details

Part number:

M2S56D20TP-10

Manufacturer:

Mitsubishi

File Size:

259.90 KB

Description:

256m double data rate synchronous dram.
DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are sub.

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M2S56D20TP-10 256M Double Data Rate Synchronous DRAM Mitsubishi

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