V58C2256164S - HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
The V58C2256(804/404/164)S is a four bank DDR DRAM organized as 4 banks x 8Mbit x 8 (804), 4 banks x 4Mbit x 16 (164), or 4 banks x 16Mbit x 4 (404).
The V58C2256(804/404/164)S achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronize
V58C2256164S Features
* High speed data transfer rates with system frequency up to 166 MHz
* Data Mask for Write Control
* Four Banks controlled by BA0 & BA1
* Programmable CAS Latency: 2, 2.5
* Programmable Wrap Sequence: Sequential or Interleave
* Programmable Burst Length: 2, 4, 8 for Sequentia
