V58C2512SB, V58C2512164SBI5 Datasheet - ProMOS Technologies

V58C2512SB High Performance 512M-Bit DDR SDRAM

The V58C2512(804/404/164)SB is a four bank DDR DRAM organized as 4 banks x 16Mbit x 8 (804), 4 banks x 32Mbit x 4 (404), 4 banks x 8Mbit x 16 (164). The V58C2512(804/404/164)SB achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronize.

V58C2512SB Features

* High speed data transfer rates with system frequency up to 200MHz

* Data Mask for Write Control

* Four Banks controlled by BA0 & BA1

* Programmable CAS Latency: 2.5, 3

* Programmable Wrap Sequence: Sequential or Interleave

* Programmable Burst Length: 2, 4, 8 for Sequential

V58C2512164SBI5_ProMOSTechnologies.pdf

V58C2512SB Datasheet Preview — This datasheet PDF includes multiple part numbers: V58C2512SB, V58C2512164SBI5. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

V58C2512SB, V58C2512164SBI5

Manufacturer:

ProMOS Technologies

File Size:

0.99 MB

Description:

High performance 512m-bit ddr sdram.

Note:

This datasheet PDF includes multiple part numbers: V58C2512SB, V58C2512164SBI5.
Please refer to the document for exact specifications by model.

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V58C2512SB V58C2512164SBI5 High Performance 512M-Bit DDR SDRAM ProMOS Technologies

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