V58C2512164SBI5 Datasheet (ProMOS Technologies) - High Performance 512M-Bit DDR SDRAM

V58C2512164SBI5, High Performance 512M-Bit DDR SDRAM

The V58C2512(804/404/164)SB is a four bank DDR DRAM organized as 4 banks x 16Mbit x 8 (804), 4 banks x 32Mbit x 4 (404), 4 banks x 8Mbit x 16 (164).

The V58C2512(804/404/164)SB achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronize

V58C2512164SBI5 Features

* High speed data transfer rates with system frequency up to 200MHz

* Data Mask for Write Control

* Four Banks controlled by BA0 & BA1

* Programmable CAS Latency: 2.5, 3

* Programmable Wrap Sequence: Sequential or Interleave

* Programmable Burst Length: 2, 4, 8 for Sequential