V58C2512164SBI5_ProMOSTechnologies.pdf
Datasheet Details
Part number:
V58C2512164SB, V58C2512164SBI5
Manufacturer:
ProMOS Technologies
File Size:
0.99 MB
Description:
High performance 512m-bit ddr sdram.
Note:
This datasheet PDF includes multiple part numbers: V58C2512164SB, V58C2512164SBI5.
Please refer to the document for exact specifications by model.
V58C2512164SB, V58C2512164SBI5, High Performance 512M-Bit DDR SDRAM
The V58C2512(804/404/164)SB is a four bank DDR DRAM organized as 4 banks x 16Mbit x 8 (804), 4 banks x 32Mbit x 4 (404), 4 banks x 8Mbit x 16 (164).
The V58C2512(804/404/164)SB achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronize
V58C2512164SB Features
* High speed data transfer rates with system frequency up to 200MHz
* Data Mask for Write Control
* Four Banks controlled by BA0 & BA1
* Programmable CAS Latency: 2.5, 3
* Programmable Wrap Sequence: Sequential or Interleave
* Programmable Burst Length: 2, 4, 8 for Sequential
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