BCW30LT1 Datasheet - Motorola Inc

BCW30LT1 General Purpose Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW29LT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER BCW29LT1 BCW30LT1 3 1 MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc 2 CASE 318 08, STYLE 6 SOT 23 (TO 236AB) .

BCW30LT1 Features

* the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT

* 23 package, PD can be calculated as follows: PD = TJ(max)

* TA RθJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperatu

BCW30LT1_MotorolaInc.pdf