BCW60DLT1 Datasheet - Motorola Inc

BCW60DLT1 General Purpose Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW60ALT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE BCW60ALT1 BCW60BLT1 BCW60DLT1 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) THERMAL CHARACTE.

BCW60DLT1 Features

* limits indicated by the applicable curve. The data of Figure 20 is based upon T J(pk) = 150 °C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient tempera

BCW60DLT1 Datasheet (425.18 KB)