BCW61DLT1 Datasheet - Motorola Inc

BCW61DLT1 - General Purpose Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW61BLT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BCW61BLT1 BCW61CLT1 BCW61DLT1 3 MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 CASE 318 08, STYLE 6 SOT 23 (T

BCW61DLT1 Features

* the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT

* 23 package, PD can be calculated as follows: PD = TJ(max)

* TA RθJA SOLDERING PRECAUTIONS The melting temperature of

BCW61DLT1_MotorolaInc.pdf