BCW33LT1 Datasheet - Motorola Inc

BCW33LT1 General Purpose Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW33LT1/D General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 20 30 5.0 100 Unit Vdc Vdc Vdc mAdc BCW33LT1 3 1 2 MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous CASE 318 08, STYLE 6 SOT 23 (TO 236AB) THERMAL CHARACTERISTICS Characteristic To.

BCW33LT1 Features

* d 260°C for more than 10 seconds.

* When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.

* After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as th

BCW33LT1_MotorolaInc.pdf