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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR92ALT1/D
The RF Line
NPN Silicon High-Frequency Transistors
Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. • T1 suffix indicates tape and reel packaging of 3,000 units per reel.
BFR92ALT1
RF TRANSISTORS NPN SILICON
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value 15 20 2.0 25 150 0.273 3.
BFR92ALT1 Datasheet
