M4N25 - 6-Pin DIP Optoisolators Transistor Output
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N25/D M4N25 6-Pin DIP Optoisolators Transistor Output The M4N25 device consists of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications Meets or Exceeds All JEDEC Registered Specifications Applications General Purpose Switching Circuits Interfacing and coupling syst
M4N25 Features
* 6F Seibu
* Butsuryu
* Center, 3
* 14
* 2 Tatsumi Koto
* Ku, Tokyo 135, Japan. 81
* 3
* 3521
* 8315 Mfax™: RMFAX0@email.sps.mot.com
* TOUCHTONE 602
* 244
* 6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industria
