M4N26 Datasheet - Motorola Inc

M4N26 6-Pin DIP Optoisolators Transistor Output

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N26/D M4N26 6-Pin DIP Optoisolators Transistor Output The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Most Economical Optoisolator Choice for Medium Speed, Switching Applications Meets or Exceeds All JEDEC Registered Specifications Applications General Purpose Switching Circuits Interfacing and coupli.

M4N26 Features

* >

* JLDC, 6F Seibu

* Butsuryu

* Center, 3

* 14

* 2 Tatsumi Koto

* Ku, Tokyo 135, Japan. 81

* 3

* 3521

* 8315 Mfax™: RMFAX0@email.sps.mot.com

* TOUCHTONE 602

* 244

* 6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping In

M4N26_MotorolaInc.pdf

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Datasheet Details

Part number:

M4N26

Manufacturer:

Motorola Inc

File Size:

139.58 KB

Description:

6-pin dip optoisolators transistor output.

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M4N26 M4N26 6-Pin DIP Optoisolators Transistor Output Motorola Inc

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