M4N37 - 6-Pin DIP Optoisolators Transistor Output
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N37/D M4N37 6-Pin DIP Optoisolators Transistor Output The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
Current Transfer Ratio 100% Minimum @ Specified Conditions Guaranteed Switching Speeds Meets or Exceeds All JEDEC Registered Specifications Applications General Purpose Switching Circuits
M4N37 Features
* Distribution; P.O. Box 5405, Denver, Colorado 80217. 303
* 675
* 2140 or 1
* 800
* 441
* 2447 JAPAN: Nippon Motorola Ltd.; Tatsumi
* SPD
* JLDC, 6F Seibu
* Butsuryu
* Center, 3
* 14
* 2 Tatsumi Koto
* Ku, Tokyo 135, Japan. 81
