www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by VN2222LL/D TMOS FET Transistor N Channel Enhancement 2 GATE 3 DRAIN VN2222LL Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage (RGS = 1.0 MΩ) Gate Source Voltage Continuous Non repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Opera.