VN2222L - N-Channel Enhancement-Mode MOS Transistors
flCrSiliconix ~ incorporated VN2222KM, VN2222L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VN2222KM 60 7.5 0.25 TO-237 VN2222L 60 7.5 0.23 TO-92 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDP06 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN2222KM VN2222L Drain-Source Voltage.
VN2222L Features
* internal gate-source zener diode
VN2222KM 125
VN2222L 156
UNITS °C/W
6-89
VN2222KM, VN2222L
ELECTRICAL CHARACTERISTICS1
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage
V(BR)OSS VaS(th)
Vas =OV,10=100jJ.A Vos = Vas, 10 = 1 mA
Gate-Body Leakage