VN2222KM Datasheet - Siliconix

VN2222KM N-Channel Enhancement-Mode MOS Transistors

flCrSiliconix ~ incorporated VN2222KM, VN2222L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VN2222KM 60 7.5 0.25 TO-237 VN2222L 60 7.5 0.23 TO-92 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDP06 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN2222KM VN2222L Drain-Source Voltage.

VN2222KM Features

* internal gate-source zener diode VN2222KM 125 VN2222L 156 UNITS °C/W 6-89 VN2222KM, VN2222L ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VaS(th) Vas =OV,10=100jJ.A Vos = Vas, 10 = 1 mA Gate-Body Leakage

VN2222KM-Siliconix.pdf