2N176
Motorola
111.53kb
Pnp germanium power transistors.
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2N1702 - NPN Transistor
(SSDI)
6 AMP NPN
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mh.
2N1702 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=60V(Min) ·Minimum Lot-to-Lot variations for robust device
P.
2N1705 - PNP Transistor
(Motorola)
2N 1692, 2N 1693
For Specifications, See 2N1561 Data.
2N1705 thru 2N1707 (GERMANIUM)
PNP germanium transistors for audio driver applications in tran.
2N1706 - PNP Transistor
(Motorola)
2N 1692, 2N 1693
For Specifications, See 2N1561 Data.
2N1705 thru 2N1707 (GERMANIUM)
PNP germanium transistors for audio driver applications in tran.
2N1707 - PNP Transistor
(Motorola)
2N 1692, 2N 1693
For Specifications, See 2N1561 Data.
2N1705 thru 2N1707 (GERMANIUM)
PNP germanium transistors for audio driver applications in tran.
2N1708 - NPN silicon transistor
(Motorola)
1708 2N
(SILICON)
CASE 26
(TO-.oI6)
\
Collector electrically connected to case
NPN silicon transistor designed for very highspeed, low-power satu.
2N1711 - NPN LOW POWER SILICON TRANSISTOR
(Microsemi)
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
2N1711
2N1890
Qualified Level
JAN JANTX
MAXIMUM RATINGS
.
2N1711 - NPN medium power transistor
(Philips)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N1711 NPN medium power transistor
Product specification Supersedes data of September 1994 .
2N1711 - SWITCHES AND UNIVERSAL AMPLIFIERS
(STMicroelectronics)
2N1613 2N1711
SWITCHES AND UNIVERSAL AMPLIFIERS
DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal ca.
2N1711 - NPN Low Power Silicon Transistor
(VPT)
2N1711, 2N1711S 2N1890, 2N1890S
NPN Low Power Silicon Transistor
Rev. V1
Features
• Available in JAN, JANTX and JANTXV per MIL-PRF-19500/225 • TO-5.
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