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2N1970 PNP germanium power transistors

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Description

1970 2N (GERMANIUM) 2N 1980 thru 2N 1982 ~ i J~I CASE 5 (T0-36) PNP germanium power transistors for general purpose amplifier and switching applic.

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Datasheet Specifications

Part number
2N1970
Manufacturer
Motorola
File Size
59.07 KB
Datasheet
2N1970-Motorola.pdf
Description
PNP germanium power transistors

Applications

* MAXIMUM RATINGS Rating Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Symbol vCB VCEO VEB 2N1970 100 50 40 2N1980 50 30 20 2N1981 70 40 20 Collector Current IC Power Dissipation at TC = 250 C PD Junction Temperature Range TJ IS 170 -65 to +110 ELECTRICAL CHARA

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