2N1970 Datasheet (Motorola) - PNP germanium power transistors

2N1970, PNP germanium power transistors

1970 2N (GERMANIUM) 2N 1980 thru 2N 1982 ~ i J~I CASE 5 (T0-36) PNP germanium power transistors for general purpose amplifier and switching applications.

MAXIMUM RATINGS Rating Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Symbol vCB VCEO VEB 2N1970 100 50 40 2N1980 50 30 20 2N1981 70 40 20 Collector Current IC Power Dissipation at TC = 250 C PD Junction Temperature Range TJ IS 170 -65 to +110 ELECTRICAL CHARACTERISTICS (TA = 2SOC unless otherwise note