2N1959 Datasheet (Motorola)

2N1959, NPN Transistor

2N1959 (SILICON) CASE 31 (TO S) NPN silicon annular transistor designed for highspeed, medium-power saturated switching applications.

Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage RBE = 10 ohms Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCER VCB VEB Ie Po PD TJ