Datasheet Specifications
- Part number
- 2N1959
- Manufacturer
- Motorola
- File Size
- 87.56 KB
- Datasheet
- 2N1959-Motorola.pdf
- Description
- NPN Transistor
Description
2N1959 (SILICON) CASE 31 (TO *S) NPN silicon annular transistor designed for highspeed, medium-power saturated switching applications.Collector.
Applications
* Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage RBE = 10 ohms Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Ran2N1959 Distributors
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