2N2696 Datasheet (Motorola)

2N2696, PNP Transistor

2N2696 (SILICON) 2N2927 PNP SILICON ANNULAR TRANSISTORS designed for use in medium-speed, non-saturated switching applications_ High Collector-Emitter Breakdown Voltage - = = BVCEO 25 Vdc @IC 100/!Adc High Collector-Base Breakdown Voltage BVCBO = 25 Vdc@ IC = 100/!Adc MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Sase Voltage Emitter-Base Voltage Collector Current -'Continuous Total Device Dissipation@TA = 25°C Derate above 25°C Total Device Dissipation @Te= 25