2N2609 Datasheet - NES

2N2609 P-CHANNEL POWER MOSFET

Technical Data 2N2609 JAN POWER MOSFET P CHANNEL Processed per MIL-PRF-19500/296 …DESIGNED FOR GENERAL PURPOSE SMALL SIGNAL SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Value Gate-Source Voltage VGSS 30 0 Power Dissipation (1) TA = 25 C PD 300 Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 (1) Derate linearly, 1.71 mW/ 0C for TA = 250C. ELECTRICAL CHARACTERISTICS (TA = 25 C unless other.

2N2609-NES.pdf

2N2609 Datasheet Preview — Preview of 2N2609 PDF

Datasheet Details

Part number:

2N2609

Manufacturer:

NES

File Size:

91.34 KB

Description:

P-channel power mosfet.

📁 Related Datasheet

2N2604 (2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR (Microsemi Corporation)

2N2604 PNP SIlicon Transistor (Central)

2N2604UB PNP SILICON LOW POWER TRANSISTOR (Microsemi)

2N2605 AMPLIFIER TRANSISTOR (Motorola)

2N2605 (2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR (Microsemi Corporation)

2N2605 PNP SIlicon Transistor (Central)

2N2605UB PNP SILICON LOW POWER TRANSISTOR (Microsemi)

2N2608 GENERAL PURPOSE JFET (Motorola)

TAGS

2N2609 2N2609 P-CHANNEL POWER MOSFET NES

2N2609 Distributor