Part number: 2N3127
Manufacturer: Motorola
File Size: 171.82KB
Download: 📄 Datasheet
Description: PNP germanium mesa transistor
.
Active Elements Isolated From Case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Emitter Voltage Collect.
Image gallery
TAGS
📁 Related Datasheet
2N3120 - PNP SILICON TRANSISTOR
(Motorola)
2N3120 (SILICON) 2N3121
PNP SILICON ANNULAR TRANSISTORS
· .. designed for general-purpose, medium·speed switching applications.
• Choice of Package a.
2N3120 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3121 - PNP SILICON TRANSISTOR
(Motorola)
2N3120 (SILICON) 2N3121
PNP SILICON ANNULAR TRANSISTORS
· .. designed for general-purpose, medium·speed switching applications.
• Choice of Package a.
2N3121 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV.
2N3122 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3107 - NPN SILICON EPITAXIAL TRANSISTOR
(Micro Electronics)
.
2N3107 - (2N3107 - 2N3110) NPN Silicon AF Medium Amplifiers and Switches
(Micro Electronics)
www..com
.
2N3107 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3108 - Bipolar NPN Device
(Semelab Plc)
www..com
2N3108
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically seale.
2N3108 - NPN SILICON EPITAXIAL TRANSISTOR
(Micro Electronics)
www..com
.