2N3313
Motorola
216.58kb
Pnp germanium power transistors.
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2N331 - PNP Transistor
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CASE 31(1)
(TO·S)
All leads isolated
PNP germanium transistor for audio range amplifier and switching service in military equipmen.
2N3311 - PNP germanium power transistors
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2N3311 thru 2N3316 (GERMANIUM)
PNP germanium power transistors for high-power applications.
CASE 5
(TO·36) Collector corinected to clse
MAXIMUM RATI.
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2N3311 thru 2N3316 (GERMANIUM)
PNP germanium power transistors for high-power applications.
CASE 5
(TO·36) Collector corinected to clse
MAXIMUM RATI.
2N3314 - PNP germanium power transistors
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2N3311 thru 2N3316 (GERMANIUM)
PNP germanium power transistors for high-power applications.
CASE 5
(TO·36) Collector corinected to clse
MAXIMUM RATI.
2N3315 - PNP germanium power transistors
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2N3311 thru 2N3316 (GERMANIUM)
PNP germanium power transistors for high-power applications.
CASE 5
(TO·36) Collector corinected to clse
MAXIMUM RATI.
2N3316 - PNP germanium power transistors
(Motorola)
2N3311 thru 2N3316 (GERMANIUM)
PNP germanium power transistors for high-power applications.
CASE 5
(TO·36) Collector corinected to clse
MAXIMUM RATI.
2N3300 - GENERAL PURPOSE TRANSISTOR
(Motorola)
2N3299
2N3300
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
2N3301 2N3302
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Applicab.
2N3300 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3300 - Bipolar NPN Device
(Seme LAB)
2N3300
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N3300 - Transistor
(New Jersey Semi-Conductor)
.
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