2N3301
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Small signal transistors. BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V)
📁 Related Datasheet
2N3300 - GENERAL PURPOSE TRANSISTOR
(Motorola)
2N3299
2N3300
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
2N3301 2N3302
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Applicab.
2N3300 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3300 - Bipolar NPN Device
(Seme LAB)
2N3300
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N3300 - Transistor
(New Jersey Semi-Conductor)
.
2N3301 - GENERAL PURPOSE TRANSISTOR
(Motorola)
2N3299
2N3300
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
2N3301 2N3302
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Applicab.
2N3302 - GENERAL PURPOSE TRANSISTOR
(Motorola)
2N3299
2N3300
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
2N3301 2N3302
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Applicab.
2N3302 - Transistor
(New Jersey Semi-Conductor)
.
2N3302 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV.
2N3303 - NPN silicon annular transistor
(Motorola)
2N3303 (SILICON)
NPN silicon annular transistor designed for highspeed, high-current switching and driving applications.
CASE 94 Collector connected.
2N3304 - PNP silicon annular transistor
(Motorola)
2N3304 (SILICON)
PNP silicon annular transistor designed for lowlevel, high-speed switching applications.
CASE 22
(TO·18) Collector connected to cese.
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