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2N3396 - SILICON NPN TRANSISTORS

This page provides the datasheet information for the 2N3396, a member of the 2N3395 SILICON NPN TRANSISTORS family.

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR 2N3395 series are silicon NPN transistors designed for low level, low noise amplifier applications.

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Datasheet Details

Part number 2N3396
Manufacturer Central Semiconductor
File Size 150.90 KB
Description SILICON NPN TRANSISTORS
Datasheet download datasheet 2N3396 Datasheet
Additional preview pages of the 2N3396 datasheet.

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Full PDF Text Transcription

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2N3395 2N3396 2N3397 2N3398 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3395 series are silicon NPN transistors designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg 25 25 5.0 100 360 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=25V IEBO VEB=5.0V BVCEO IC=1.0mA 25 hFE VCE=4.5V, IC=2.0mA (2N3395) 150 hFE VCE=4.5V, IC=2.0mA (2N3396) 90 hFE VCE=4.5V, IC=2.0mA (2N3397) 55 hFE VCE=4.
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