2N4428
Motorola
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Npn silicon rf power transistor.
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2N442 - PNP Transistor
(Motorola)
2N441 (GERMANIUM)
2N442 2N443
~ CASE 5
(10-36)
.
PNP germanium power transistors for power switching and amplifier applications. Power and temper.
2N4424 - SILICON TRANSISTORS
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.
2N4424 - SILICON NPN TRANSISTORS
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2N4424
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w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4424 is a silicon NPN epitaxial planar tr.
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2N4427 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
(Microsemi Corporation)
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N4427
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Fea.
2N4427 - Silicon planar epitaxial overlay transistors
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DISCRETE SEMICONDUCTORS
DATA SHEET
2N3866; 2N4427 Silicon planar epitaxial overlay transistors
Product specification Supersedes data of August 1986 F.
2N4427 - SILICON NPN RF TRANSISTOR
(Central Semiconductor Corp)
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w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar.
2N4427 - HIGH FREQUENCY TRANSISTOR
(Motorola)
2N4427
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON 4U
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base .
2N4427 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(ASI)
2N4427
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The ASI 2N4427 is a High Frequency Transistor Designed for Amplifier .
2N4427 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
(Advanced Power Technology)
2N4427
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features
• • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output.
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