MGW12N120 Insulated Gate Bipolar Transistor

Motorola

Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N *Channel Enhancement.

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Datasheet Specifications

Part number: MGW12N120
Manufacturer: Motorola
File Size: 228.98 KB
Datasheet: MGW12N120_MotorolaInc.pdf
Description: Insulated Gate Bipolar Transistor

Applications

* requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies.
* Industry Standard High Power TO
* 247 Package with Isolated Mounting Hole
* High Speed Eoff: 160 mJ/A typical at

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MGW12N120 Insulated Gate Bipolar Transistor Motorola

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